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| SD1018-06 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1018-06 is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .380 4L FLG B .112 x 45 A FEATURES: * PG = 4.5 dB Typ. at 40 W /175 MHz * C = 60% Typ. at 40 W /175 MHz * OmnigoldTM Metalization System E C O.125 NOM. FULL R J .125 B C D F E E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 6.0 A 36 V DIM I GH MINIMUM inches / mm MAXIMUM inches / mm 18 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 C/W A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.48 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICBO hFE Cob PG C IC = 20 mA TC = 25 C NONETEST CONDITIONS IC = 100 mA IE = 10 mA VCB = 15 V VCE = 5.0 V VCB = 15 V VCC = 12.5 V PIN = 14 W POUT = 40 W IC = 1.0 A f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 36 18 4.0 2.5 5.0 200 4.5 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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